dmn2004dwk q document number: ds 38630 rev. 1 - 2 1 of 6 www.diodes.com february 2016 ? diodes incorporated new product dmn2004dwk q dual n - channel enhancement mode mosfet product summary v (br)dss r ds( on ) max i d t a = + 25 c 20 v 0.55 ? @ v gs = 4.5 v 540ma description this mosfet is designed to minimize the on - state resistance (r ds( on ) ) and yet maintain superior switch ing performance, making it ideal for high - efficiency power management applications. applications ? load switch features ? dual n - channel mosfet ? low on - resistance ? low gate threshold voltage ? low input capacitance ? fast switching speed ? low input/output leakag e ? ultra - small surface mount package ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: sot363 ? case mat erial: molded plastic, green molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish - matte tin a nnealed over alloy 42 l eadframe. solderable per mil - std - 202, method 208 ? weight: 0.006 grams ( a pproximate) ordering information (note 5 ) part number case packaging dmn2004dwk q - 7 sot363 3 , 000/tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/ eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . automotive products are aec - q101 qualified and are ppap capable. r efer t o http://www.diodes.com / product_compliance_definitions .h tml. 5. for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information date code key year 2006 2007 . 2013 2014 2015 2016 2017 201 8 201 9 20 20 20 21 code t u month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot363 t op view t op view internal schematic nab = product type marking code ym = date code marking y or y = year (ex: a = 201 3 ) m = month (ex: 9 = september) s 1 d 1 d 2 s 2 g 1 g 2 esd protected to 2kv nab ym n a b y m e3
dmn2004dwk q document number: ds 38630 rev. 1 - 2 2 of 6 www.diodes.com february 2016 ? diodes incorporated new product dmn2004dwk q maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss 20 v gate - source voltage v gss 8 v drain current (note 6 ) steady state t a = + 25 c t a = + 85 c i d 540 390 ma pulsed drain current (note 7 ) i dm 1.5 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 6 ) p d 200 mw thermal res istance, junction to ambient r ? ja 625 c/w operating and storage temperature range t j , t stg - 65 to +150 c electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source break down voltage bv dss 20 - - v v gs = 0v, i d = 10 a zero gate voltage drain current i dss - - 1 a v ds = 16v, v gs = 0v gate - source leakage i gss - - ? gs = ? ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) 0.5 - 1.0 v v ds = v gs , i d = 250 a static drain - source on - resistance r ds (on) - 0.4 0.5 0.7 0.55 0.70 0.9 gs = 4.5v, i d = 540ma v gs = 2.5v, i d = 500ma v gs = 1.8v, i d = 350ma forward transfer admittance |y fs | 200 - - m s v ds = 10v, i d = 0.2a diode forward voltage (note 8 ) v sd 0.5 - 1.4 v v gs = 0v, i s = 115ma dynamic characteristics (note 8 ) input capacitance c iss - 36 150 pf v ds = 16v, v gs = 0v f = 1.0mhz output capacitance c oss - 5.7 25 pf reverse transfer capacitance c rss - 4.2 20 pf total gate charge ( v g s = 4.5 v ) q g - 0.53 - n c v ds = 1 0 v, i d = 250m a total gate charge ( v gs = 8.0 v ) q g - 0.95 - gate - source charge q gs - 0.08 - gate - drain charge q gd - 0.07 - turn - on delay time t d( on ) - 4.1 - ns v dd = 1 0v, r l = 47 ? gen = 4.5 v, r gen = 10 ? r - 7.3 - ns turn - off delay time t d( off ) - 13.8 - ns turn - off fall time t f - 10.5 - ns notes: 6 . device mounted on fr - 4 pcb. 7 . p ulse width ? 10 s, duty cycle ? 1%. 8 . short duration pulse test us ed to minimize self - heating effect.
dmn2004dwk q document number: ds 38630 rev. 1 - 2 3 of 6 www.diodes.com february 2016 ? diodes incorporated new product dmn2004dwk q ( c ) 0 0 1 2 3 4 5 v , drain-source voltage (v) fig. 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d v , gate-source voltage (v) fig. 2 gs reverse drain current vs. source-drain voltage t , channel temperature ( C ) fig. 3 gate threshold voltage vs. channel temperature ch 0.1 i drain current (a) fig. 4 static drain-source on-resistance vs. drain current d , 1 r , s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? i , drain current (a) fig. 5 static drain-source on-resistance vs. drain current d r , s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 6
dmn2004dwk q document number: ds 38630 rev. 1 - 2 4 of 6 www.diodes.com february 2016 ? diodes incorporated new product dmn2004dwk q i , drain current (a) fig. 7 d on-resistance vs. drain current and gate voltage t , junction temperature ( c) fig. 8 j static drain-source, on-resistance vs. temperature i , d r a i n - s o u r c e l e a k a g e c u r r e n t ( n a ) d s s i , r e v e r s e d r a i n c u r r e n t ( a ) d r 1000 i , drain current (ma) d fig. 11 forward transfer admittance vs. drain current | y | , f o r w a r d t r a n s f e r a d m i t t a n c e ( s ) f s 0 10 20 30 40 50 60 0 5 10 15 20 f=1mhz c , j u n c t i o n c a p a c i t a n c e ( p f ) t v , drain-source voltage (v) ds figure 12 typical junction capacitance c iss c oss c rss
dmn2004dwk q document number: ds 38630 rev. 1 - 2 5 of 6 www.diodes.com february 2016 ? diodes incorporated new product dmn2004dwk q package outline dimensions please see http://www.diodes.com/package - outlines.html for the latest version. sot363 sot363 dim min max typ a1 0.00 0.10 0.05 a2 0.90 1.00 1.00 b 0.10 0.30 0.25 c 0.10 0.22 0.11 d 1.80 2.20 2.15 e 2.00 2.20 2.10 e1 1.15 1.35 1.30 e 0.650 bsc f 0.40 0.45 0.425 l 0.25 0.40 0.30 a 8 all dimensions in mm 0 2 4 6 8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 v g a t e t h r e s h o l d v o l t a g e ( v ) g s q , total gate charge (nc) g figure 13 gate charge v = 10v ds i = 250ma d 0.001 0.01 0.1 1 10 0.1 1 10 100 i , d r a i n c u r r e n t ( a ) d v , drain-source voltage (v) ds figure 14 soa, safe operation area t = 150c j (m ax ) t = 25c a v = 4.5v gs single pulse dut on 1 * mrp board dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w r ds(on) limited e d l e1 b e f a2 a1 c a
dmn2004dwk q document number: ds 38630 rev. 1 - 2 6 of 6 www.diodes.com february 2016 ? diodes incorporated new product dmn2004dwk q suggested pad layout please see http://www.diodes.com/package - outlines.html for the latest version. sot363 important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equi valents under the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described her ein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of other s. any customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, h armless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintende d or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death as sociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product name s and markings noted herein may also be covered by one or more united s tates, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. l ife support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling c an be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree th at they are solely responsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes incorporated products in such safety - crit ical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com dimensions value (in mm) c 0.650 g 1.300 x 0.420 y 0.600 y1 2.500 y1 g y x c
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